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APT1201R2BFLL APT1201R2SFLL
1200V 12A 1.200
BFLL
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
D3PAK
TO-247
SFLL
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT1201R2BFLL_SFLL UNIT Volts Amps
1200 12 48 30 40 403 3.23 -55 to 150 300 12 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1200 1.20 250 1000 100 3 5
(VGS = 10V, ID = 6A)
Ohms A nA Volts
5-2004 050-7393 Rev B
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT1201R2BFLL_ SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 600V ID = 12A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 600V ID = 12A @ 25C 6 RG = 1.6 INDUCTIVE SWITCHING @ 25C VDD = 800V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 800V, VGS = 15V ID = 12A, RG = 5 ID = 12A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
2540 365 70 100 14 65 8 18 29 21 465 100 935 135
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
UNIT Amps Volts V/ns ns C Amps
12 48 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -12A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -12A, di/dt = 100A/s) Reverse Recovery Charge (IS = -12A, di/dt = 100A/s) Peak Recovery Current (IS = -12A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
210 710 1.0 3.6 10 14
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.31 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 18.06mH, RG = 25, Peak IL = 12A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ID-12A di/dt 700A/s VR 1200 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35
, THERMAL IMPEDANCE (C/W)
0.30 0.25
0.9
0.7 0.20 0.5 0.15 0.10 0.05 0 0.3 Note:
PDM t1 t2
050-7393 Rev B
5-2004
JC
0.1 0.05 10-5 10-4
SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
Z
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
25
APT1201R2BFLL_SFLL
VGS =15,10 & 8V 7V 6.5V
Junction temp. (C)
RC MODEL
20
0.0258
0.00295F
15 6V 10 5.5V 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 0
Power (watts)
0.107
0.0114F
05
0.177 Case temperature. (C)
0.174F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
30
ID, DRAIN CURRENT (AMPERES)
25 20
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.40
V
GS
NORMALIZED TO = 10V @ I = 6A
D
1.30 1.20 1.10 1.00 0.90 0.80 VGS=10V
TJ = -55C 15 10 5 0 TJ = +25C TJ = +125C
VGS=20V
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
2
12 10 8 6 4 2 0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
ID, DRAIN CURRENT (AMPERES)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I V
D
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6
= 6A = 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50 -25
050-7393 Rev B
5-2004
48
OPERATION HERE LIMITED BY RDS (ON)
10,000 5,000
APT1201R2BFLL_SFLL
Ciss
ID, DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
10 5 100S
1,000 Coss 100 Crss
1
1mS 10mS
I
D
= 12A
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TC =+25C TJ =+150C SINGLE PULSE .1 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100
10
12
VDS=100V VDS=250V
8
VDS=400V
TJ =+150C 10 TJ =+25C
4
20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 80 70 60 td(off)
V
DD G
0
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 50
1
40 tf
tr and tf (ns)
td(on) and td(off) (ns)
50 40 30 20 10 0 5
= 800V
R
= 5
30
V
DD G
= 800V
T = 125C
J
R
= 5
L = 100H
T = 125C
J
20
L = 100H
10 td(on) ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
tr
10
15
20
15 20 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1400 1200
SWITCHING ENERGY (J)
0
5
10
1600 1400
SWITCHING ENERGY (J)
= 800V
R
= 5
Eon
T = 125C
J
1200 1000 800 600 400 200 0 5
L = 100H E ON includes diode reverse recovery.
Eon
1000 800 600
V
5-2004
400 200 0
DD
= 800V
Eoff
I
D J
= 12A
Eoff
T = 125C L = 100H E ON includes diode reverse recovery.
050-7393 Rev B
ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
10
15
20
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT1201R2BFLL_SFLL
10%
Gate Voltage 90% TJ = 125C Gate Voltage td(off) DrainVoltage TJ = 125C
td(on) tr Drain Current 90% 5%
Switching Energy
90%
tf 10% Drain Current 0
5% 10% DrainVoltage
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF120B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline (BFLL)
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline (SFLL)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7393 Rev B
5-2004
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)

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